? silikron semiconductor corporation 2011.2.21 version: 1. 1 page 1of5 SSF1016D absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current,vgs@10v 60 a i d @t c =100 ? c continuous drain current,vgs@10v 50 i dm pulsed drain current 240 p d @t c =25 ? c power dissipation 1 44 w linear derating factor 1.5 w/ ? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 380 mj dv/dt peak diode recovery voltage 31 v/ns t j t stg operating junction and storage temperature range ?55 to +1 75 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case ? 0.52 ? ? c/w r ja junction-to-ambient ? ? 62 electrical characteristics @tj=25 ? c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 11 16 m ? v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds =v gs ,i d =250 a i dss drain-to-source leakage current ? ? 2 a v ds =100v,v gs =0v ? ? 10 v ds =100v, v gs =0v,t j =150 ? c i gss gate-to-source forward leakage ? ? 100 na v gs =20v gate-to-source reverse leakage ? ? -100 v gs =-20v q g total gate charge ? 90 nc SSF1016D top view (dpak) id =60a bv=100v rdson=16 m ? (max.) feathers: ? advanced trench process technology ? avalanche energy, 100% test ? fully characterized avalanche voltage and current description: the SSF1016D is a new generation of high voltage and low current n?channel enhancement mode trench power mosfet. this new technology in creases the dev ice reliability and electrical parameter repeatability. SSF1016D is assembled in high reliability and qualified assembly house. application: ? power switching application
? silikron semiconductor corporation 2011.2.21 version: 1. 1 page 2of5 SSF1016D q gs gate-to-source charge ? 20 ? i d =30a,v gs =10v v dd =30v q gd gate-to-drain("miller") charge ? 31 ? t d(on) turn-on delay time ? 18.2 ns v dd =30v i d =2a ,r l =15 ? r g =2.5 ? v gs =10v t r rise time ? 15.6 t d(off) turn-off delay time ? 70.5 t f fall time ? 13.8 c iss input capacitance ? 3150 pf v gs =0v v ds =25v f=1.0mhz c oss output capacitance ? 350 c rss reverse transfer capacitance ? 240 source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) ? ? 75 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current (body diode) ? ? 300 v sd diode forward voltage ? ? 1.3 v t j =25 ? c,i s =60a,v gs =0v t rr reverse recovery time 57 ? ns t j =25 ? c,i f =75a di/dt=100a/ s q rr reverse recovery charge 107 ? c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) eas test circuit: gate charge test circuit: switch time test circuit: switch waveform: notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, vdd = 50v,id=37a pulse width 300 s, duty cycle 1.5% ; rg = 25 ? ?? starting tj = 25c
? silikron semiconductor corporation 2011.2.21 version: 1. 1 page 3of5 SSF1016D transfer characteristic capacitance on resistance vs. junction temperature breakdown voltage vs. junction temperature
? silikron semiconductor corporation 2011.2.21 version: 1. 1 page 4of5 SSF1016D gate charge source-drain diode forward voltage safe operation area max drain current vs. junction transient thermal impedance curve
? silikron semiconductor corporation 2011.2.21 version: 1. 1 page 5of5 SSF1016D dpak mechanical data:
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